Zinc oxide nanowires make ultrasensitive photodetectors
30 April 2007
The geometry of semiconducting nanowires makes them
uniquely suited for light detection, according to a new University of
California study
that highlights the possibility of nanowire light detectors with
single-photon sensitivity.
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| A single zinc oxide (ZnO) nanowire held down by
metal contacts. Nanowire segments between the contacts can serve as
photodetectors. |
Nanowires are crystalline fibres about one
thousandth the width of a human hair, and their inherent properties are
expected to enable new photo-detector architectures for sensing, imaging,
memory storage, intrachip optical communications and other nanoscale
applications, according to a new study in an upcoming issue of the journal
Nano Letters.
The University of California San Diego (UCSD) engineers illustrate why the large surface
areas, small volumes and short lengths of nanowires make them extremely
sensitive photodetectors — much more sensitive than larger photodetectors
made from the same materials.
"These results are encouraging and suggest a bright future for nanowire photodetectors, including single-photon
detectors, built from nanowire structures,” said Deli Wang, an electrical
and computer engineering (ECE) professor from the UCSD Jacobs School of
Engineering and corresponding author on the Nano Letters paper.
For a
nanowire to serve as a photodetector, photons of light with sufficient
energy must hit the nanowire in such a way that electrons are split from
their positively charged holes. Electrons must remain free from their holes
long enough to zip along the nanowire and generate electric current under an
applied electric field — a sure sign that light has been detected.
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| Drawing of a
single nanowire photodetector. When light strikes the nanowire in
such a way that an electron and hole in the semiconducting material
split apart, the electron runs along the wire and increases the
wire's current and light is detected. |
Schematic of the
trapping and photoconduction mechanism in ZnO nanowires. At the top
of each box are "energy band diagrams" ("b" represents the situation
in darkness and "c" under UV illumination). In ZnO nanowires (as
compared to some other semiconducting nanowires), the lifetime of
the unpaired electrons is further inreased by oxygen molecules
desorption from the surface when holes neutralize the oxygen ions. |
The new
research demonstrates that the geometry of nanowires — with so much surface
area compared to volume — makes them inherently good at trapping holes.
Dangling bonds on vast nanowire surfaces trap holes, and when holes are
trapped, the time it takes electrons and holes to recombine increases.
Delaying the reunion of an electron and its hole increases the number of
times that electron travels down the nanowire, which in turn triggers an
increase in current and results in “internal photoconductive gain.”
“Different kinds of nanowires detect different wavelengths of light. You
could make a red-green-blue photodetector on the nanoscale by combining the
right three kinds of nanowires,” said Cesare Soci, one of two primary
authors on the Nano Letters paper and a postdoctoral researcher in the Deli
Wang lab at the Jacobs School. The other primary author is Arthur Zhang, a
graduate student in the lab of Yu-Hwa Lo, an electrical engineering
professor at the Jacobs School. This work supports recent theoretical work
from Peter Asbeck’s High Speed Device Group, also at the Jacobs School.
“Our theoretical work showed that light-induced conductivity in nanowires
can be increased by more than 10 times over similar bulk structures under
the same illumination level. The work from Deli Wang’s lab has confirmed
some of our calculations and provides further support for the idea that
nanowires will be increasingly incorporated into photodetection and
photovoltaic applications,” said Asbeck. In the new work, short pulses of
ultraviolet light (hundreds of femtoseconds wide) were detected on time
scales in the nanosecond range. Moreover, using electronic measurement of
photocurrent, the engineers reported internal photoconductive gain (G) as
high as 108 — one of the highest ever reported. “Although nanowire
detectors offer both high speed and high gain, the most important figure of
merit for the device is the signal-to-noise ratio or the sensitivity,”
explained Yu-Hwa Lo, an author on the Nano Letters paper and the
director of NANO3, the clean nanofabrication facility at Calit2's UCSD
campus. “Because of the unique geometry of nanowires, the active volume
that produces dark current, a source of noise, is only one thousandth that
of a normal size photodetector. This enables nanowire detectors to achieve
very high sensitivity, provided that light can be efficiently coupled into
the nanowires. Several methods have been proposed to achieve light coupling
efficiency, such as placing the nanowires in an optical resonant cavity. In
theory, a nanowire detector can achieve single photon sensitivity, which is
the ultimate sensitivity for any photodetector,” said Lo. The engineers
also show that molecular oxygen absorbed at the surface of zinc oxide (ZnO)
nanowires capture free electrons present in n-type ZnO nanowires and make
them especially good at keeping holes and electrons apart. The oxygen
mechanism the authors outline explains much of the enhanced sensitivity
reported in ZnO nanowire photodetectors. The engineers fabricated and
characterized UV photodetectors made from ZnO nanowires with diameters of
150 to 300 nanometers and lengths ranging from 10 to 15 micrometers. The
researchers studied the photoconductivity of zinc oxide nanowires over a
broad time range and under both air and vacuum. Analytical studies
performed by Peter Asbeck and ECE graduate student Lingquan Wang and
published in the proceedings of IEEE-NANO 2006 support the mechanism
outlined in the Nano Letters paper. According to Wang, this work
also highlights how moving to the nanoscale can sometimes throw intuitions
out the window. “The surface trap states that help to make nanowires such
sensitive light detectors are the very same surface features that engineers
desperately avoid when manufacturing semiconductors for computer
transistors, where they hamper performance,” Wang said.
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